$$
\begin{aligned}
& I_{D 1}=I_{\mathrm{REF}}=\frac{1}{2} k_n^{\prime}\left(\frac{w}{L}\right)_1 V_{O V}^{\prime} \\
& 100=\frac{1}{2} \times 200 \times 10 V_{O V}^2
\end{aligned}
$$


Thus,

$$
V_{O V}=0.316 \mathrm{~V}
$$

and

$$
\begin{aligned}
V_{G S} & =V_t+V_{O V}=0.7+0.316 \cong 1 \mathrm{~V} \\
R & =\frac{V_{D D}-V_{G S}}{I_{\mathrm{REF}}}=\frac{3-1}{0.1 \mathrm{~mA}}=20 \mathrm{k} \Omega \\
V_{O \min } & =V_{O V} \cong 0.3 \mathrm{~V}
\end{aligned}
$$


For the transistors used, $L=1 \mu \mathrm{~m}$. Thus,

$$
\begin{aligned}
& V_A=20 \times 1=20 \mathrm{~V} \\
& r_{o 2}=\frac{20 \mathrm{~V}}{100 \mu \mathrm{~A}}=0.2 \mathrm{M} \Omega
\end{aligned}
$$